toaucti, una* 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2n690 4 n-channe l logi c leve l powe r mo s field-effec t transistor s (l 2 fet ) 8 a , 20 0 v ros(on) : 0. 6 0 features : ? design optimized tor 5 volt gate drive ? ca n b e driven directly from q-mos, n-mos, ttl circuits ? compatible with automotive drive requirements ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? majority carrier device n-channe l enhancemen t mod e termina l diagra m th e 2n690 4 i s a n n-channe l enhancement-mod e silicon - gat e powe r mo s field-effec t transisto r specificall y designe d fo r us e wit h logi c leve l ( 5 volt ) drivin g source s i n application s suc h a s programmabl e controllers , automotiv e switching , an d solenoi d drivers . thi s performanc e i s accomplishe d throug h a specia l gat e oxid e desig n whic h provide s ful l rate d conductio n a t gat e biase s i n th e 3- 5 vol t range , thereb y facilitatin g tru e on-of f powe r contro l directl y fro m logi c circui t suppl y voltages . th e 2n690 4 i s supplie d i n th e jede c to-204a a stee l package . termina l designatio n sourc e jede c to-204a a maximu m ratings , absolute maximum values (t c = 25 c) : ? drain-sourc e voltage , v d ? . 200 v ' drain-gat e voltag e (r ? = 1 mo) , voo r 20 v ' gate-sourc e voltage , va ? 10 v ' dai n current , rm s continuous , i d 8 a pulsed , lo w . ' 2 0 a ? powe r dissipation , p i a t t c = 25c 7 5 w abov e t c = 25"c , derat e linearl y - 6 w/ c ' operatin g an d storag e temperature , t, . t., . -5 8 t o -h50- c ? lea d temperature . t l a t distanc e > 1/ 8 in . (3.1 7 mm ) fro m seatin g plan e fo r 10 s ma n 260 c n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
2n690 4 electrica l characteristic s a t c?? e twnptratur * (t c = 25 c ) unles s otherwl m specifie d characteristi c drain-sourc e breakdow n voltag e bvos s gat e threshol d voltag e vos(th ) zer o gat e voltag e drai n curren t los s gate-sourc e leakag e curren t los s drain-sourc e o n voltag e vos(on) ? stati c drain-sourc e o n resistanc e r 0 s(on) ? forwar d transconductanc e g* * inpu t capacitanc e c* . outpu t capacitanc e c 0 > > reverse-transfe r capacitanc e c,? , turn-o n dela y tim e mon ) rise tim e t , turn-of f dela y tim e t d (off ) fal l tim e t , therma l resistanc e junction-to-cas e rft c tes t condition s i d = 1 ma , vo s = 0 vo s * v ds , i d = 1 m a vd s = 160 v t c = 125c , vo s = 160 v v qs = 1 0 v , vd s = 0 i d = 5. 1 a , vq s = 5 v i d = 8 a , vo s = 5 v i d = 5. 1 a t c =125c , i 0 =5. 1 a , vos=5 v vds = 5v , i d = 5.1 a v,, s = 2 5 v vg s = 0 v f = 0. 1 mh z v od =100 v i d = 5. 1 a rq? : = rg . = 1 5 o v a s = 5 v limit s min . 20 0 1 ? 3 35 0 7 5 2 0 max . 2 1 5 0 10 0 3.0 6 5. 5 0. 6 1.1 1 1 2 90 0 25 0 10 0 4 5 15 0 13 5 15 0 1.6 7 unit s vv m n a v ft mh o p f n s c/ w source-drai n diod e rating s an d characteristic s characteristi c diod e forwar d voltag e vso a revers e recover y tim e t, . tes t condition s is d = 8 a i f = 4 a di f /dt = 100a//u s limit s min . 0. 8 max . 1. 6 62 5 unit s v n s * i n accordanc e wit h jede c registratio n data . ?pulsed : puls e duratio n = 30 0 fjs, max. , dut y cycl e = 2% . downloaded from: http:///
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